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An Analytical Model for Saturation Drain Current Including the Higher Order Effect of Source and Drain Series Resistance in Sub-20 nm MOSFETs
http://hdl.handle.net/10212/2195
http://hdl.handle.net/10212/21951b5e25a4-e3fe-4593-9fb1-c71c31ff205b
| 名前 / ファイル | ライセンス | アクション |
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全文 (1.9 MB)
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内容・審査結果の要旨 (296.5 KB)
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| Item type | 学位論文 / Thesis or Dissertation(1) | |||||||||
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| 公開日 | 2015-09-17 | |||||||||
| タイトル | ||||||||||
| タイトル | An Analytical Model for Saturation Drain Current Including the Higher Order Effect of Source and Drain Series Resistance in Sub-20 nm MOSFETs | |||||||||
| 言語 | en | |||||||||
| その他のタイトル | ||||||||||
| その他のタイトル | 20 nm MOSFETs におけるソース・ドレイン抵抗の高次効果を含む解析飽和ドレイン電流モデル | |||||||||
| 言語 | ja | |||||||||
| 作成者 |
尹, 鍾鐵
× 尹, 鍾鐵
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| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 主題 | ||||||||||
| 言語 | ja | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | ソース・ドレイン抵抗 | |||||||||
| 主題 | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | 20nm MOSFET | |||||||||
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| 言語 | ja | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | チャネル長変調係数 | |||||||||
| 主題 | ||||||||||
| 言語 | ja | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | MOSFET解析モデル | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | In device design of sub-20 nm metal-oxide-semiconductor field-effect transistors (MOSFETs), an accurate analytical current model including an effect of source and drain series resistance becomes important. To investigate the effects of the series resistance, the current driving capability is calculated for planar bulk, fully-depleted silicon-on-insulator (FD SOI), and multigate (MG) MOSFETs using the international technology roadmap for semiconductors (ITRS) data. We find that the effect of the series resistance becomes larger year by year, and the change of the resistance effect due to the structure change is small. An analytical model for saturation drain current including the higher order terms of the series resistance effect is derived to improve the accuracy of the model and understand the physical meaning of the effect of higher-order terms, and simulated. As a result, the higher order terms are important for analyzing the effect of the series resistance as gate length decreases. The resistance ratio of the source resistance to the channel resistance is dominant factor in device design for sub-20 nm MOSFETs. We investigate the structural dependence of the series resistance on saturation drain current in sub-20 nm technology nodes. The reduction rate of the saturation drain current due to the effect of the series resistance is calculated in planar bulk, FD SOI, and MG MOSFETs in high-performance (HP), low-operating-power (LOP), and low-standby-power (LSTP) technologies. We know that the reduction rate of the saturation drain current depends on the structure change of MOSFET. The dominant factor for the reduction rate of saturation drain current is the ratio of the series resistance to the channel resistance in HP technology. The dominant factor for the reduction rate of saturation drain current is the ratio of the overdrive voltage to the supply voltage in LOP technology. The dominant factor for the reduction rate of saturation drain current is the resistance and the voltage ratios in LSTP technology. | |||||||||
| 言語 | en | |||||||||
| 日付 | ||||||||||
| 日付 | 2014-09-25 | |||||||||
| 日付タイプ | Issued | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_db06 | |||||||||
| 資源タイプ | doctoral thesis | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 学位授与番号 | ||||||||||
| 学位授与番号 | 甲第723号 | |||||||||
| 学位名 | ||||||||||
| 言語 | ja | |||||||||
| 学位名 | 博士（学術） | |||||||||
| 学位授与年月日 | ||||||||||
| 学位授与年月日 | 2014-09-25 | |||||||||
| 学位授与機関 | ||||||||||
| 学位授与機関識別子Scheme | kakenhi | |||||||||
| 学位授与機関識別子 | 14303 | |||||||||
| 言語 | ja | |||||||||
| 学位授与機関名 | 京都工芸繊維大学 | |||||||||
